ASML and TSMC Announce Initiative to Pioneer Industry Transition to Large-Format Photomasks for High NA EUV
ASML and TSMC Announce Initiative to Pioneer Industry Transition to Large-Format Photomasks for High NA EUV On September 7, in advance of the SPIE Bacus Conference, ASML and TSMC formed a collaborative industry initiative to drive the transition to 12-inch photomasks, maximizing the value of High NA EUV lithography. The initiative targets establishing a 12-inch mask pilot line by 2031, supporting full lithography system readiness for advanced node production by 2033. Underscoring broad industry support, High NA EUV adopters and other major suppliers, have expressed their interest to join the initiative. HSINCHU, Taiwan, R.O.C. and VELDHOVEN, the Netherlands – September 8, 2026 – Taiwan S
